MR756 Power Mosfet Transistor High Current Lead Mounted Rectifiers

High Current Lead Mounted Rectifiers

Features

• Current Capacity Comparable to Chassis Mounted Rectifiers

• Very High Surge Capacity

• Insulated Case

• Pb−Free Packages are Available* Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 2.5 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Polarity: Cathode Polarity Band

MR7 = Device Code

xx = 50, 51, 52, 54, 56 or 60

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

For a square wave input of amplitude Vm, the efficiency factor becomes:

(A full wave circuit has twice these efficiencies)

As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing AC voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor σ, as shown on Figure 9.

It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the AC component of Vo with a true rms AC voltmeter and the DC component with a DC voltmeter. The data was used in Equation 1 to obtain points for Figure 9.

multi emitter transistor

silicon power transistors

MR756 Power Mosfet Transistor High Current Lead Mounted Rectifiers Images