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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

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Brand Name : FAIRCHILD

Model Number : NDT456P

Certification : Original Factory Pack

Place of Origin : Philippines

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 20000

Delivery Time : 1

Packaging Details : please contact me for details

Drain-Source Voltage : 30 V

Gate-Source Voltage : ±20 V

Drain Current : ±7.5 A

Operating and Storage Temperature Range : -65 to 150 °C

Thermal Resistance, Junction-to-Ambien : 42 °C/W

Thermal Resistance, Junction-to-Case : 12 °C/W

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NDT456P P-Channel Enhancement Mode Field Effect Transistor

Features

♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V

♦High density cell design for extremely low RDS(ON)

♦High power and current handling capability in a widely used surface mount package.

NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

Symbol Parameter NDT456P Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
TJ ,TSTG Operating and Storage Temperature Range 65 to 150 °C
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor


Product Tags:

diode rectifier circuit

      

signal schottky diode

      
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